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KR20160110657A - Polymer for hard mask, hard mask composition including the polymer, and method for forming pattern of semiconductor device using the hard mask composition - Google Patents
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PDF) Sub-100 nm silicon-nitride hard-mask for high aspect-ratio silicon fins
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Materials | Free Full-Text | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
Etching characteristics of TiN used as hard mask in dielectric etch process: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena: Vol 24, No 5
